Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: IPAK
Drain-Source Breakdown Voltage
: - 55 V
Continuous Drain Current
: - 28 A
Features: · Ultra Low On-Resistance
· Surface Mount (IRFR5305)
· Straight Lead (IRFU5305)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Unit |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -10V |
-31 |
A |
| ID @ TA= 70 |
Continuous Drain Current, VGS @ -10V |
-22 |
A |
| IDM |
Pulsed Drain Current |
-110 |
A |
| PD @TA = 25 |
Power Dissipation |
110 |
W |
| PD @TA = 70 |
Power Dissipation |
0.71 |
W/ |
| |
Linear Derating Factor |
± 20 |
V |
| VGS |
Gate-to-Source Voltage |
280 |
mJ |
| EAS |
Single Pulse Avalanche Energy |
-16 |
A |
| IAR |
Avalanche Current |
11 |
mJ |
| EAR |
Repetitive Avalanche Energy |
-5.0 |
V/ns |
| TJ,TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
|
DescriptionFifth Generation HEXFETs from International Rectifier IRFU5305PbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRFU5305PbF , combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parameters: | Technical/Catalog Information | IRFU5305PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFU5305PBF
IRFU5305PBF
|
IRFU5305PBF Data Sheet
