IRFU5410

MOSFET P-CH 100V 13A I-PAK

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SeekIC No. : 003431447 Detail

IRFU5410: MOSFET P-CH 100V 13A I-PAK

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Part Number:
IRFU5410
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 13A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 58nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 760pF @ 25V
Power - Max: 66W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 13A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 58nC @ 10V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds: 760pF @ 25V
Power - Max: 66W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


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