IRFU6215, US $ .78-.78, IRFU6215 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432871 Detail

IRFU6215: MOSFET P-CH 150V 13A I-PAK

IRFU6215 Data Sheet

US $ .78~.78 / Piece | Get Latest Price

Part Number:: IRFU6215
Mfg:
Supply Ability:: 5000

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0~375

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$.78

Processing time
15 Days

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Upload time: 2024/4/29

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MOSFET N-Chan 60V 7.7 Amp

Product Details

Quick Details

Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	MOSFET P-Channel, Metal Oxide	Gain :	19.5 dB
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	150V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	13A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	295 mOhm @ 6.6A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	66nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	860pF @ 25V
Power - Max:	110W	Mounting Type:	Through Hole
Package / Case:	TO-251-3 Long Leads, IPak, TO-251AB	Supplier Device Package:	I-Pak

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25° C: 13A
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 860pF @ 25V
Gate Charge (Qg) @ Vgs: 66nC @ 10V
Manufacturer: International Rectifier
Power - Max: 110W
Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak

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IRFU6215

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