MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
IRFU6215PBF: MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 150 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 13 A |
Mounting Style : | Through Hole | Package / Case : | IPAK |
Packaging : | Tube |
`P-Channel
`175 Operating Temperatur
`Surface Mount (IRFR6215)
`Straight Lead (IRFU6215)
`Advanced Process Technology
` Fast Switching
`Fully Avalanche Rated
`Lead-Free
Parameter |
Max. |
Units | |
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren VGS@ 10V |
-13 |
A |
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren VGS@ 10V |
-9.0 | |
IDM |
Pulsed Drain Current |
-44 | |
PD@ TC= 25 |
Power Dissipatio |
110 |
W |
Linear Derating Factor |
0.71 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
310 |
mJ |
IAR |
Avalanche Current |
-6.6 |
A |
EAR |
Repetitive Avalanche Energy |
11 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Fifth Generation HEXFETs from International Rectifier IRFU6215PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFU6215PbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Technical/Catalog Information | IRFU6215PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 295 mOhm @ 6.6A, 10V |
Input Capacitance (Ciss) @ Vds | 860pF @ 25V |
Power - Max | 110W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFU6215PBF IRFU6215PBF |