IRFU9024N

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
Power - Max: 38W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Features:

Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-11	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-8
IDM	Pulsed Drain Current	-44
PD @TC = 25°C	Power Dissipation	38	W
	Linear Derating Factor	0.30	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	62	mJ
IAR	Avalanche Current	-6.6	A
EAR	Repetitive Avalanche Energy	3.8	mJ
dv/dt	Peak Diode Recovery dv/dt	-10	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	260 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier IRFU9024N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFU9024N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.