IRFU9120

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-251
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.6 Ohms
Continuous Drain Current : 5.6 A


Features:

• 5.6A, 100V
• r_DS(ON) = 0.600W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		IRFR9120, IRFU9120	UNITS
Drain to Source Voltage	VDSS	-100	V
Drain to Gate Voltage (RGS = 20k)	VDGR	-100	V
Gate to Source Voltage	VGS	±20	V
Continuous Drain Current	ID	5.6	A
Pulsed Drain Current	IDM	Refer to Peak Current Curve
Single Pulse Avalanche Rating	EAS	Refer to UIS Curve
Power Dissipation	PD	42	W
Linear Derating Factor		0.33	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334	TL Tpkg	300 260

Description

These advanced power MOSFETs IRFU9120 are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. The IRFU9120 is P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits.