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MFG:IR  Package Cooled:TO-251  D/C:09+  

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Part Number: IRFU9120

 

MFG: IR

Package Cooled: TO-251

D/C: 09+

Description: These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of ene...


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IRFU9120 General Description


These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits.

IRFU9120 Maximum Ratings

 
IRFR9120, IRFU9120
UNITS
Drain to Source Voltage
VDSS
-100
V
Drain to Gate Voltage (RGS = 20k)
VDGR
-100
V
Gate to Source Voltage
VGS
±20
V
Continuous Drain Current
ID
5.6
A
Pulsed Drain Current
IDM
Refer to Peak Current Curve
Single Pulse Avalanche Rating
EAS
Refer to UIS Curve
Power Dissipation
PD
42
W
Linear Derating Factor
0.33
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334

TL
Tpkg

300
260


IRFU9120 Features

• 5.6A, 100V
• rDS(ON) = 0.600W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

IRFU9120 datasheet

IRFU9120
PDF/DataSheet Download

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