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Part Number: IRFU9120N

 

MFG: IR

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...


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IRFU9120N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRFU9120N Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.6 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.2
IDM Pulsed Drain Current -26
PD @ TC = 25°C Power Dissipation 40 W
  Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 100 mJ
IAR Avalanche Current -6.6 A
EAR Repetitive Avalanche Energy 4.0 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRFU9120N Features

Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9120N)
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated

IRFU9120N datasheet

IRFU9120N
PDF/DataSheet Download

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