Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 40W
Current - Continuous Drain (Id) @ 25° C: 6.6A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Features: Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9120N)
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche RatedSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ -10V |
-6.6 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ -10V |
-4.2 |
| IDM |
Pulsed Drain Current |
-26 |
| PD @ TC = 25°C |
Power Dissipation |
40 |
W |
|
Linear Derating Factor |
0.32 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
100 |
mJ |
| IAR |
Avalanche Current |
-6.6 |
A |
| EAR |
Repetitive Avalanche Energy |
4.0 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
| TJ,TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
DescriptionFifth Generation HEXFETs from International Rectifier IRFU9120N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFU9120N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRFU9120N Data Sheet
