IRFU9214

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : IPAK
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 3 Ohms
Drain-Source Breakdown Voltage : - 250 V


Features:

 P-Channel
Surface Mount (IRFR9214)
Straight Lead (IRFU9214)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-2.7	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-1.7
IDM	Pulsed Drain Current	-11
PD @TC = 25°C	Power Dissipation	50	W
	Linear Derating Factor	0.40	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	-2.7	A
EAR	Repetitive Avalanche Energy	5.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	260 (1.6mm from case )

Description

Third Generation HEXFETs from International Rectifier IRFU9214 utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFU9214 design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.