Purchase IRFU9N20D, In-stock IRFU9N20D From SeekIC.
MFG:IR D/C:04+
- Table of contents:
IRFU9N20D
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Suppliers
DataSheet
General Description
IRFU9N20D Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 9.4 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 6.7 | |
| IDM | Pulsed Drain Current | 38 | |
| PD @TC = 25°C | Power Dissipation | 86 | W |
| Linear Derating Factor | 0.57 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 30 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRFU9N20D Typical Application
l High frequency DC-DC converters
IRFU9N20D
PDF/DataSheet Download
- Datasheet: IRFU9N20D
- File Size: 129839 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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