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IRFU9N20DPBF

MOSFET N-CH 200V 9.4A I-PAK

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SeekIC No. : 003432830 Detail

IRFU9N20DPBF: MOSFET N-CH 200V 9.4A I-PAK

IRFU9N20DPBF Data Sheet

floor Price/Ceiling Price

US $ .35~.65 / Piece | Get Latest Price
Part Number:
IRFU9N20DPBF
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $.65
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  • $.35
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) @ Vgs: 27nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 560pF @ 25V
Power - Max: 86W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 9.4A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 560pF @ 25V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
Power - Max: 86W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Parameters:

Technical/Catalog InformationIRFU9N20DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9.4A
Rds On (Max) @ Id, Vgs380 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds 560pF @ 25V
Power - Max86W
PackagingBulk
Gate Charge (Qg) @ Vgs27nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFU9N20DPBF
IRFU9N20DPBF



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