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IRFW610BTM_FP001

MOSFET 200V N-Ch B-FET

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SeekIC No. : 00162581 Detail

IRFW610BTM_FP001: MOSFET 200V N-Ch B-FET

IRFW610BTM_FP001 Data Sheet

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Part Number:
IRFW610BTM_FP001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : TO-263
Continuous Drain Current : 3.3 A


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