Purchase IRFW630B, In-stock IRFW630B From SeekIC.
MFG:PHL D/C:08+
Part Number: IRFW630B
MFG: PHL
D/C: 08+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
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IRFW630B
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DataSheet
General Description
IRFW630B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
IRFW630B Maximum Ratings
| Symbol | Parameter | IRFW610B / IRFI610B | Unit | |
|
VDSS |
Drain-Source Voltage |
200 | V | |
|
ID |
Drain Current - Continuous (TC = 25°C) |
9.0 |
A | |
|
5.7 |
A | |||
| TDM |
Drain Current - Pulsed (Note 1) |
36 | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) | 160 | mJ | |
|
IAR |
Avalanche Current (Note 1) |
9.0 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
|
Power Dissipation (TC = 25°C) |
72 |
W | ||
|
0.57 |
W/ | |||
|
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
|
TL |
Maximum lead temperature for soldering purposes, |
300 |
||
IRFW630B Features
• 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFW630B
PDF/DataSheet Download
- Datasheet: IRFW630B
- File Size: 664529 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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