MOSFET 250V Single
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Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved G...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 21 A | ||
Resistance Drain-Source RDS (on) : | 0.14 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |