Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current: 10 A (Max.) @VDS= 500V`Lower RDS(ON): 2.000 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-...
IRFW/I820A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current: 10 A (Max.) @VDS= 500V`Lower RDS...
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Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved G...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
500 |
V |
ID |
Continuous Drain Current (TC=25) |
2.5 |
A |
Continuous Drain Current (TC =100) |
1.6 | ||
IDM |
Drain Current-Pulsed (1) |
8 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy(2) |
208 |
mJ |
IAR |
Avalanche Current (1) |
2.5 |
A |
EAR |
Repetitive Avalanche Energy(1) |
4.9 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (3) |
3.5 |
V/ns |
PD |
Total Power Dissipation (TA =25)* |
3.1 |
W |
Total Power Dissipation (TC=25) Linear Derating Factor |
49 0.39 |
W W/ | |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8. from case for 5-seconds |
300 |