Purchase IRFY430M-T257, In-stock IRFY430M-T257 From SeekIC.
- Table of contents:
IRFY430M-T257
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Suppliers
DataSheet
General Description
IRFY430M-T257 Maximum Ratings
| VGS | Gate Source Voltage | ±20V |
| ID | Continuous Drain Current (VGS = 10V , Tcase = 25°C) | 4.5A |
| ID | Continuous Drain Current (VGS = 10V , Tcase = 100°C) | 2.8A |
| IDM | Pulsed Drain Current 1 | 18A |
| PD | Power Dissipation @ Tcase = 25°C | 75W |
| Linear Derating Factor | 0.6W/°C | |
| TJ , Tstg | Operating and Storage Temperature Range | 55 to 150°C |
| TL | Package Mounting Surface Temperature (for 5 sec) | 300°C |
| RJC | Thermal Resistance Junction to Case | 1.67°C/W max. |
IRFY430M-T257 Features
• HERMETICALLY SEALED TO257 METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
IRFY430M-T257 Typical Application
·VDSS 500V
·ID(cont) 4.5A
·RDS(on) 1.65W
·ID(cont) 4.5A
·RDS(on) 1.65W
IRFY430M-T257
PDF/DataSheet Download
- Datasheet: IRFY430M-T257
- File Size: 21014 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
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- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
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- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
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- ·IRF044SMD
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- ·IRF054
- IRF [International Rectifier]
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- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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