Purchase IRFY430M, In-stock IRFY430M From SeekIC.
- Table of contents:
IRFY430M
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Suppliers
DataSheet
General Description
IRFY430M Maximum Ratings
| VGS | Gate Source Voltage |
±20V |
| ID | Continuous Drain Current (VGS = 0 , Tcase = 25°C) |
3.7A |
| ID | Continuous Drain Current (VGS = 0 , Tcase = 100°C) |
2.4A |
| IDM | Pulsed Drain Current1 |
14A |
| PD | Power Dissipation @ Tcase = 25°C Linear Derating Factor |
45W 0.36W/°C |
| TJ,TSTG | Operating and Storage Temperature Range |
55 to 150°C |
| TL | Package Mounting Surface Temperature (for 5 sec) |
300°C |
| RJC | Thermal Resistance Junction to Case |
1.67°C/W max. |
IRFY430M Features
• HERMETICALLY SEALED TO220 METAL PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
IRFY430M
PDF/DataSheet Download
- Datasheet: IRFY430M
- File Size: 18889 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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