IRFZ24L

MOSFET N-CH 60V 17A TO-262

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SeekIC No. : 003432328 Detail

IRFZ24L: MOSFET N-CH 60V 17A TO-262

floor Price/Ceiling Price

US $ .57~.57 / Piece | Get Latest Price
Part Number:
IRFZ24L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $.57
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 17A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 25nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 640pF @ 25V
Power - Max: 3.7W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262-3    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) @ Vds: 640pF @ 25V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 17A
Power - Max: 3.7W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 68
PD @TA = 25°C Power Dissipation 3.7 W
PD @TC = 25°C Power Dissipation 60 W
  Linear Derating Factor 0.40 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalance Energy 100 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )  



Description

Third Generation HEXFETs from International Rectifier IRFZ24L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24L design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ24L is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ24L provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRFZ24L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24L) is available for lowprofile applications.




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