Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 17 A
Specifications
|
Parameter |
Max. |
Units |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
ID @ TC = 25
ID @ TC =100
IDM |
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current |
17
12
68 |
A
|
|
Linear Derating Factor |
0.30 |
W/ |
EAS
IAR
EAR |
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
|
71
10
4.5 |
mJ
A
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ, TSTG
|
Junction and Storage Temperature Range |
-55 to +150 |
|
|
Soldering Temperature,for 10 seconds |
300(1.6mm from case) |
|
Mounting torque,6-32 or M3 screw |
10 lbf`in(1.0N`m) |
|
DescriptionFifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24NPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRFZ24NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 370pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ24NPBF
IRFZ24NPBF
|
IRFZ24NPBF Data Sheet
