IRFZ24N,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 19nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 17A
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 45W
Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds: 500pF @ 25V


Parameters:

Technical/Catalog Information	IRFZ24N,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	500pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	TO-220AB-3
FET Feature	Standard
Drawing Number	568; SOT78; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ24N,127 IRFZ24N,127