IRFZ24V Selling Leads, Price trend, IRFZ24V DataSheet download, circuit diagram from SeekIC.com

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drain Current 68 PD @TC = 25°C Power Dissipation 44 W Linear Derating Factor 0.29 W/°C VGS Gate-to...

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IRFZ24V: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drain Current 6...

IRFZ24V Data Sheet

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Part Number:: IRFZ24V
Supply Ability:: 5000

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Specifications

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	17	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	12
I_DM	Pulsed Drain Current	68
P_D @T_C = 25°C	Power Dissipation	44	W
	Linear Derating Factor	0.29	W/°C
V_GS	Gate-to-Source Voltage	±20	V
I_AR	Avalance Current	17	A
E_AR	Repetitive Avalanche Energy	4.4	mJ
dv/dt	Peak Diode Recovery dv/dt	4.2	V/ns
T_J T_stg	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier IRFZ24V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24V design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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IRFZ24V

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