Position: Home  > All Categories> Integrated Circuits (ICs) > IRFZ24VLPbF

IRFZ24VLPbF

MOSFET N-CH 60V 17A TO-262

product image

IRFZ24VLPbF Picture
See larger image
SeekIC No. : 004377608 Detail

IRFZ24VLPbF: MOSFET N-CH 60V 17A TO-262

IRFZ24VLPbF Data Sheet

floor Price/Ceiling Price

US $ .33~.62 / Piece | Get Latest Price
Part Number:
IRFZ24VLPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $.62
  • $.45
  • $.43
  • $.4
  • $.38
  • $.36
  • $.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Optimized for SMPS Applications
`Lead-Free


Specifications
Parameter
Max.
Units
IC @ Tc = 25
 Continuous Drain CurrentVGS @ 10V
17
A
IC @ Tc = 100
Continuous Drain CurrentVGS @ 10V
12

IDM

Pulsed Drain Current
68

PD @ Tc= 25

 Power Dissipation
44
W
  Linear Derating Factor
0.29
W/
VGS
Gate-to-Emitter Voltage
±20
V
IAR
Avalanche Current
17
A
EAR
ReverseVoltage Avalanche Energy
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
4.2
V/ns

TJ
TSTG

Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VLPbF  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24VLPbF  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ24VLPbF  is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ24VLPbF  provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ24VLPbF  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ24VL) is available for low-profile applications.

 




Parameters:

Technical/Catalog InformationIRFZ24VLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs60 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 590pF @ 25V
Power - Max44W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ24VLPBF
IRFZ24VLPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Cable Assemblies
CS1W-CN114
XW2Z-500T
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Integrated Circuits (ICs)
TA8435H
1MB12-140
Undefined Category
VI-B63-IU
X27 589
Transformers
TM-09210
BV222-1-00992
View more