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IRFZ24VPbF

MOSFET N-CH 60V 17A TO-220AB

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SeekIC No. : 004377609 Detail

IRFZ24VPbF: MOSFET N-CH 60V 17A TO-220AB

IRFZ24VPbF Data Sheet

floor Price/Ceiling Price

US $ .41~.41 / Piece | Get Latest Price
Part Number:
IRFZ24VPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~3000
  • Unit Price
  • $.41
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Optimized for SMPS Applications


Specifications

Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ -10V,Tc = 25 ID 17 A
Continuous Drain Current, VGS @ -10V,Tc = 100 ID 12 A
Pulsed Drain Current*1 IDM 68 A
Power Dissipation Tc = 25 PD 44 W
Linear Derating Factor   0.29 /W
Gate-to-Source Voltage VGS ±20 V
Avalanche Current *1 IAR 17 A
Repetitive Avalanche Energy EAR 4.4 mJ
Peak Diode Recovery dv/dt *2 dv/dt 4.2 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf.in (1.1N.m)  



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24VPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRFZ24VPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs60 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 590pF @ 25V
Power - Max44W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ24VPBF
IRFZ24VPBF



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