IRFZ34L

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 3.7W
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Gate Charge (Qg) @ Vgs: 46nC @ 10V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V


Features:

· Advanced Process Technology
· Surface Mount (IRFZ34S)
· Low-profile through-hole (IRFZ34L)
· 175°C Operating Temperature
· Fast Switching


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current,VGS @ 10V	30	A
ID @ TC = 100°C	Continuous Drain Current,VGS @ 10V	21
IDM	Pulsed Drain Current	120
PD @TA = 25°C	Power Dissipation	3.7	W
PD @TC = 25°C	Power Dissipation	88	W
	Linear Derating Factor	0.59	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	200	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55to+175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

	Parameter	Typ.	Max.	Units
RJC	Junction-to-Case	-	1.7	°C/W
RJA	Junction-to-Ambient (PCB mounted,steady-state) **	-	40

Description

Third Generation HEXFETs from International Rectifier IRFZ34L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34L design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRFZ34L is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ34L provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak IRFZ34L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ34L) is available for lowprofile applications.