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IRFZ34V

Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current,VGS @ 10V 30 A...

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IRFZ34V: Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications ...

IRFZ34V Data Sheet

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Part Number:
IRFZ34V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C
 Continuous Drain Current,VGS @ 10V
30
A
ID @ TC = 100°C
 Continuous Drain Current,VGS @ 10V
21
IDM
 Pulsed Drain Current
120
PD @TC = 25°C
 Power Dissipation
70
W
 Linear Derating Factor
0.46
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
81
mJ
IAR
 Avalanche Current
30
A
EAR
 Repetitive Avalanche Energy
7.0
mJ
dv/dt
 Peak Diode Recovery dv/dt
4.5
V/ns
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55to+175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf`in (1.1N`m)
  
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
2.15
°C/W
RCS Case-to-Sink, Flat, Greased Surface
0.50
-
RJA Junction-to-Ambient
-
62



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device IRFZ34V design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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