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IRFZ34VPbF

MOSFET N-CH 60V 30A TO-220AB

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SeekIC No. : 004377617 Detail

IRFZ34VPbF: MOSFET N-CH 60V 30A TO-220AB

IRFZ34VPbF Data Sheet

floor Price/Ceiling Price

US $ .45~.45 / Piece | Get Latest Price
Part Number:
IRFZ34VPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~3000
  • Unit Price
  • $.45
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Optimized for SMPS Applications
· Lead-Free


Specifications

Parameter Symbol Rating Unit
Continuous Drain Current, VGS @ 10V,Tc = 25 ID 30 A
Continuous Drain Current, VGS @ 10V,Tc = 100 ID 21 A
Pulsed Drain Current*1 IDM 120 A
Power Dissipation Tc = 25 PD 70 W
Linear Derating Factor   0.46 /W
Gate-to-Source Voltage VGS ±20 V
Single Pulse Avalanche Energy*4 EAS 81 mJ
Avalanche Current IAR 30 A
Repetitive Avalanche Energy EAR 7.0 mJ
Peak Diode Recovery dv/dt *2 dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34VPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRFZ34VPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs26 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 1120pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs49nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ34VPBF
IRFZ34VPBF



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