IRFZ44E

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Manufacturer: International Rectifier
Power - Max: 110W
Current - Continuous Drain (Id) @ 25° C: 48A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds: 1360pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	48	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	34
IDM	Pulsed Drain Current	192
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	220	mJ
IAR	Avalance Current	29	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ Tstg	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier IRFZ44E utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44E design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.