IRFZ44ESPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 23 mOhms
Continuous Drain Current : 48 A


Features:

`Advanced Process Technology
`Surface Mount (IRFZ44ES)
`Low-profile through-hole (IRFZ44EL)
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated
`Lead-Free


Specifications

	Parameter	Max.	Units
ID@TC =25	Continuous Drain Current, VGS@10V	48	A
ID@TC =100	Continuous Drain Current,VGS@10V	34
IDM	Pulsed Drain Current	192
PD@TC = 25	CPower Dissipatio	110	W
	Linear Derating Factor	0.71	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	220	mJ
IAR	Avalanche Current	29	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf.in (1.1N.m)

Description

Fifth Generation HEXFETs from International Rectifier IRFZ44ESPbF utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44ESPbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for us
e in a wide variety of applications.

The D² Pak IRFZ44ESPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ44ESPbF provides the highest power capability and the lowest Pak is possible on-resistance in any existing surface mount package. The D²  suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44ESPbF) is available for low-profile applications.

Parameters:

Technical/Catalog Information	IRFZ44ESPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	23 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds	1360pF @ 25V
Power - Max	110W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ44ESPBF IRFZ44ESPBF