IRFZ44N,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 110W
Current - Continuous Drain (Id) @ 25° C: 49A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V


Parameters:

Technical/Catalog Information	IRFZ44N,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	49A
Rds On (Max) @ Id, Vgs	22 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	62nC @ 10V
Package / Case	TO-220AB-3
FET Feature	Standard
Drawing Number	568; SOT78; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ44N,127 IRFZ44N,127