Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36 IDM Pulsed Drain Current 200 PD @TA = 25°C Power Dissipation 3.7 W PD @TC = 25°C Power Dissipation 150 W Li...
IRFZ44S/L: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36 IDM Pulsed Drain Current ...
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| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 50 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 36 | |
| IDM | Pulsed Drain Current | 200 | |
| PD @TA = 25°C | Power Dissipation | 3.7 | W |
| PD @TC = 25°C | Power Dissipation | 150 | W |
| Linear Derating Factor | 1.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 100 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Third Generation HEXFETs from International Rectifier IRFZ44S/L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44S/L design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRFZ44S/L is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRFZ44S/L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44S/L) is available for lowprofile applications.