IRFZ44VZ

MOSFET N-CH 60V 57A TO-220AB

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IRFZ44VZ Picture
SeekIC No. : 003431735 Detail

IRFZ44VZ: MOSFET N-CH 60V 57A TO-220AB

floor Price/Ceiling Price

US $ .79~.79 / Piece | Get Latest Price
Part Number:
IRFZ44VZ
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~350
  • Unit Price
  • $.79
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 57A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 65nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1690pF @ 25V
Power - Max: 92W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 65nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 57A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 1690pF @ 25V
Power - Max: 92W
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V


Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon Limited) 57 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40
IDM Pulsed Drain Current 230
PD @TC = 25°C Power Dissipation 92 W
  Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS (Thermally limited) Single Pulse Avalanche Energy 73 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 110
IAR Avalance Current See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy mJ
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZ utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ44VZ features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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