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MFG:IR
Part Number: IRFZ44VZPbF
MFG: IR
Description: Specifically designed for Automotive applications this HEXFET&re...
- Table of contents:
IRFZ44VZPbF
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Suppliers
DataSheet
General Description
IRFZ44VZPbF General Description
Specifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFZ44VZPbF Maximum Ratings
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V (Silicon Limited) |
57 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS@10V |
40 | |
|
IDM |
Pulsed Drain Current |
230 | |
|
PD @ TC = 25 |
Power Dissipation |
92 |
W |
| Linear Derating Factor |
0.61 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS (Thermally limited) |
Single Pulse Avalanche Energy |
73 |
mJ |
|
EAS (Tested) |
Single Pulse Avalanche Energy Tested Value |
110 | |
|
IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
|
EAR |
Repetitive Avalanche Energy |
mJ | |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
IRFZ44VZPbF Features
` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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