MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 57 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 40 | |
| IDM | Pulsed Drain Current | 230 | |
| PD @TC = 25°C | Power Dissipation | 92 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy | 73 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 110 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbfin (1.1Nm) |
IRFZ44VZS
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Specifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temp...
Specifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZLPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating tem...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating tem...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZ utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temp...
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