Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 51 A
Features: `Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
51 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V (See Fig. 9) |
36 |
| IDM |
Pulsed Drain Current |
200 |
| PD @TC = 25 |
Maximum Power Dissipation |
80 |
W |
| |
Linear Derating Factor |
0.53 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy (Thermally Limited) |
86 |
mJ |
| EAS (tested) |
Single Pulse Avalanche Energy Tested Value |
105 |
| IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
| TJ ,TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ44ZPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRFZ44ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 51A |
| Rds On (Max) @ Id, Vgs | 13.9 mOhm @ 31A, 10V |
| Input Capacitance (Ciss) @ Vds | 1420pF @ 25V |
| Power - Max | 80W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ44ZPBF
IRFZ44ZPBF
|
IRFZ44ZPBF Data Sheet
