MFG:IR Package Cooled:TO-220 D/C:07+
MFG: IR
Package Cooled: TO-220
D/C: 07+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 51 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 36 | |
| IDM | Pulsed Drain Current | 200 | |
| PD @TC = 25 | Maximum Power Dissipation | 80 | W |
| Linear Derating Factor | 0.53 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 86 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 105 | |
| IAR | Avalanche Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
IRF034
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