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MFG:IR  Package Cooled:D2-PAK  D/C:09+  

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Part Number: IRFZ44ZS

 

MFG: IR

Package Cooled: D2-PAK

D/C: 09+

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRFZ44ZS General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRFZ44ZS Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon Limited) 51 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(See Fig. 9) 36
IDM Pulsed Drain Current 200
PD @TC = 25°C Maximum Power Dissipation 80 W
  Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 86 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 105
IAR Avalance Current See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy mJ
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRFZ44ZS Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

IRFZ44ZS datasheet

IRFZ44ZS
PDF/DataSheet Download

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