MFG:IR Package Cooled:TO-220 D/C:08+
MFG: IR
Package Cooled: TO-220
D/C: 08+
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V |
53 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS@10V |
37 | |
|
IDM |
Pulsed Drain Current |
180 | |
|
PD @ TC = 25 |
Power Dissipation |
107 |
W |
| Linear Derating Factor |
0.71 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
IAR |
Avalanche Current |
28 |
A |
|
EAR |
Repetitive Avalanche Energy |
11 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
IRF034
PDF/DataSheet Download
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