Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NPbF utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedizeddevice IRFZ46NPbF des...
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ46NLPbF...
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ46N design ...
Third Generation HEXFETs from International Rectifier IRFZ46L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ46Ldesign that HEXFET...