IRFZ46ZSPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 13.6 m Ohms


Features:

􀁏 `Advanced Process Technology
􀁏 `Ultra Low On-Resistance
􀁏 `Dynamic dv/dt Rating
􀁏 `175 Operating Temperature
􀁏 `Fast Switching
􀁏 `Repetitive Avalanche Allowed up to Tjmax
􀁏 `Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	51	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	36
IDM	Pulsed Drain Current	200
PD @TC = 25	Maximum Power Dissipation	82	W
	Linear Derating Factor	0.54	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	63	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	97
IAR	Avalanche Current 􀀀	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRFZ46ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ46ZSPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFZ46ZSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	51A
Rds On (Max) @ Id, Vgs	13.6 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds	1460pF @ 25V
Power - Max	82W
Packaging	Tube
Gate Charge (Qg) @ Vgs	46nC @ 10V
Package / Case	D²Pak, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ46ZSPBF IRFZ46ZSPBF