MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 55V 64A D2PAK
800
.93000
744.00
| Technical/Catalog Information | IRFZ48NSTRRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 64A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 32A, 10V |
| Input Capacitance (Ciss) @ Vds | 1970pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 81nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ48NSTRRPBF IRFZ48NSTRRPBF |
IRF034
PDF/DataSheet Download
MOSFET N-CH 55V 64A D2PAK
MOSFET N-CH 55V 64A D2PAK
The IRFZ48NSPbF and IRFZ48NLPbF has 7 features.The first one is advanced process technology.The second one is surface mount (IRFZ48NS) .The third one is low-profile through-hole(IRFZ48NL) .The fourth one is 175 operating temperature.The fifth one is fast sw...
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48NS desig...
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48NPbF d...
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