Position: Home > Datasheet list > IRF Series > Index I > IRFZ48R
Electronica China

Purchase IRFZ48R, In-stock IRFZ48R From SeekIC.

 

IRFZ48R Product Image

IRF Series Datasheet download

Five Points

Part Number: IRFZ48R

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


Urgent Purchase

IRFZ48R General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRFZ48R Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50* A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 50*
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 190 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 100 mJ
IAR Avalance Current 50 A
EAR Repetitive Avalanche Energy 19 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRFZ48R datasheet

IRFZ48R
PDF/DataSheet Download

Find IRFZ48R Suppliers

  • ·IRF034
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 147521 KB
  • IRF034 Datasheet Download
  • ·IRF044
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 22513 KB
  • IRF044 Datasheet Download
  • ·IRF044SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 21905 KB
  • IRF044SMD Datasheet Download
  • ·IRF054
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 149688 KB
  • IRF054 Datasheet Download
  • ·IRF054SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 23141 KB
  • IRF054SMD Datasheet Download
  • ·IRF100
  • ETC [ETC] 
  • 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 
  • 86902 KB
  • IRF100 Datasheet Download
  • ·IRF101
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 27 A, 60-100V 
  • 149859 KB
  • IRF101 Datasheet Download
  • ·IRF1010E
  • IRF [International Rectifier] 
  • Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 
  • 200209 KB
  • IRF1010E Datasheet Download

Related Part Number

IRFZ48R Relative Products

  • IRFZ48NSTRRPBF

    IRFZ48NSTRRPBF

    MOSFET N-CH 55V 64A D2PAK

  • IRFZ48NSTRLPBF

    IRFZ48NSTRLPBF

    MOSFET N-CH 55V 64A D2PAK

  • IRFZ48NSTRL

    IRFZ48NSTRL

    MOSFET N-CH 55V 64A D2PAK

  • IRFZ48NSPbF

    IRFZ48NSPbF

    The IRFZ48NSPbF and IRFZ48NLPbF has 7 features.The first one is advanced process technology.The second one is surface mount (IRFZ48NS) .The third one is low-profile through-hole(IRFZ48NL) .The fourth one is 175 operating temperature.The fifth one is fast sw...

  • IRFZ48NS

    IRFZ48NS

    Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48NS desig...

  • IRFZ48NPbF

    IRFZ48NPbF

    Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48NPbF d...

Hotspot Suppliers Product

Product List

  • Models: LPC2368FBD100 Price: 0.1-7 USD

    LPC2368FBD100

    Price: 0.1-7 USD

    Single-chip, 10-bit, microcontroller

  • Models: DSP1-DC5V-F Price: 1.8-2 USD

    DSP1-DC5V-F

    Price: 1.8-2 USD

    5A small polarized power relay, DIP, High switching capability, Wide variation, High breakdown vol...

  • Models: RTL8305SC Price: 1.85-2 USD

    RTL8305SC

    Price: 1.85-2 USD

    single-chip, 5-port 10/100mbps, switch controller, dual mii interface, QFP

  • Models: BYG10J-E3 Price: 0.09-0.8 USD

    BYG10J-E3

    Price: 0.09-0.8 USD

    silicon mesa SMD rectifier, SMD, 600V, 30A, Low reverse current

  • Models: SMCJ33CA Price: 0.0619-0.0715 USD

    SMCJ33CA

    Price: 0.0619-0.0715 USD

    Surface Mount, TRANSZORB Transient Voltage Suppressor, 1500W, 33V, SMC, DO-214AB

  • Models: EPM7192SQC160-15N Price: 20-30 USD

    EPM7192SQC160-15N

    Price: 20-30 USD

    CPLD, MAX 7000S Family, 3.75K Gates, 192 Macro Cells, 5V, 160-Pin PQFP

  • Models: OPA353NA Price: 0.61-0.71 USD

    OPA353NA

    Price: 0.61-0.71 USD

    rail-to-rail CMOS operational amplifier, SOT-23-5, 10mA, high slew rate, low noise

  • Models: P6SMB10CA Price: 0.062-0.075 USD

    P6SMB10CA

    Price: 0.062-0.075 USD

    Surface Mount TRANSZORB, Transient Voltage Suppressor, SMB, 5.0 W, Excellent clamping capability

  • Models: TPS61010DGSR Price: 0.1-2 USD

    TPS61010DGSR

    Price: 0.1-2 USD

    boost converter, SOP, -0.3 V to 3.6 V

  • Models: 74LCX08MTCX Price: 0.2-0.3 USD

    74LCX08MTCX

    Price: 0.2-0.3 USD

    TSSOP, AND Gate, 5V

  • Models: RI-TRP-DR2B-30 Price: 2-10 USD

    RI-TRP-DR2B-30

    Price: 2-10 USD

    32 mm glass transponder, consistent read, write performance, 64 Bit Read, High Read/Write Performa...

  • Models: ADOP07 Price: 6.25-6.28 USD

    ADOP07

    Price: 6.25-6.28 USD

    DIP8, Analog Devices, 1.3 μV/℃, 200 V/mV, ±22 V, Low VOS

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All