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Part Number: IRFZ48RLPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre...


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IRFZ48RLPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

IRFZ48RLPbF Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 50* A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 50*
IDM Pulsed Drain Current 290
PD @TC = 25 Power Dissipation 190 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 100 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 econds		 -55 to + 175

300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRFZ48RLPbF Features

· Advanced Process Technology
· Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Drop in Replacement of the IRFZ48 for Linear/Audio Applications
· Lead-Free

IRFZ48RLPbF datasheet

IRF034
PDF/DataSheet Download

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Related Part Number

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