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Part Number: IRFZ48RPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize ...


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IRFZ48RPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRFZ48RPbF Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50* A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 50*
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 190 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 100 mJ
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 19 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N?m)

IRFZ48RPbF Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Drop in Replacement of the IRFZ48 for Linear/Audio Applications
· Lead-Free

IRFZ48RPbF datasheet

IRF034
PDF/DataSheet Download

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