IRFZ48RSPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.018 Ohms


Features:

· Advanced Process Technology
· Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Drop in Replacement of the IRFZ48 for Linear/Audio Applications
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	50*	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	50*
IDM	Pulsed Drain Current	290
PD @TC = 25	Power Dissipation	190	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	100	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range Soldering Temperature, for 10 econds	-55 to + 175 300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RSPbF  utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48RSPbF  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRFZ48RSPbF  is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D²Pak IRFZ48RSPbF  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.