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Part Number: IRFZ48RSPbF
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre...


Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre...
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 50* | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 50* | |
| IDM | Pulsed Drain Current | 290 | |
| PD @TC = 25 | Power Dissipation | 190 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 100 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 econds |
-55 to + 175 300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRF034
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