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Part Number: IRFZ48V

 

MFG: IR

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


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IRFZ48V General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRFZ48V Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 72 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 51
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 150 W
  Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 166 mJ
IAR Avalance Current 72 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)  

IRFZ48V datasheet

IRFZ48V
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