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MFG:IR  Package Cooled:D2-PAK  D/C:09+  

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Part Number: IRFZ48VS

 

MFG: IR

Package Cooled: D2-PAK

D/C: 09+

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


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IRFZ48VS General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

IRFZ48VS Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 72 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 51
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 150 W
  Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 166 mJ
IAR Avalance Current 72 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)  

IRFZ48VS datasheet

IRFZ48VS
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