Purchase IRFZ48VSPbF, In-stock IRFZ48VSPbF From SeekIC.
Part Number: IRFZ48VSPbF
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...
- Table of contents:
IRFZ48VSPbF
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Suppliers
DataSheet
General Description
IRFZ48VSPbF General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
IRFZ48VSPbF Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Continuous Drain Current, VGS @ 10V,Tc = 25 | ID | 72 | A |
| Continuous Drain Current, VGS @ 10V,Tc = 100 | ID | 51 | A |
| Pulsed Drain Current*1 | IDM | 290 | A |
| Power Dissipation Tc = 25 | PD | 150 | W |
| Linear Derating Factor | 1.0 | /W | |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Single Pulse Avalanche Energy | EAS | 166 | mJ |
| Avalanche Current *1 | IAR | 72 | A |
| Repetitive Avalanche Energy | EAR | 15 | mJ |
| Peak Diode Recovery dv/dt *2 | dv/dt | 5.3 | V/ns |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf.in (1.1N.m) | ||
IRFZ48VSPbF Features
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Optimized for SMPS Applications
· Lead-Free
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Optimized for SMPS Applications
· Lead-Free
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
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