MFG:TO-220AB Package Cooled:7850 D/C:IR
MFG: TO-220AB
Package Cooled: 7850
D/C: IR
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 43 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @TC = 25°C | Maximum Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 73 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 120 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFZ48Z
PDF/DataSheet Download
MOSFET N-CH 60V 72A D2PAK
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48VSPbF...
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48VS desig...
MOSFET N-CH 60V 72A TO-220AB
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48V design ...
Third Generation HEXFETs from International Rectifier IRFZ48S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48S design that HEXFE...
Price: 0.85-1.2 USD
Ringing Access Switch, Monolithic IC, SOP16, 5 V
Price: 0.22-0.28 USD
temperature stable, SMD, 0.22 uF, 200 Volts, General Type MLCC, AVX Corporation, 18122C224MAT2A
Price: 20-30 USD
KSZ8995E, Micrel Semiconductor, QFP-128
Price: 0.5-0.6 USD
SOP, 15kV, ESD-protected, 5V RS-232 transceiver, Low-Voltage, Low-Power, 10nA, 3.0V
Price: 1.5-2 USD
precision quad operational amplifier, SOP16, ±22V, 5mA, Low Voltage Noise, 0.1Hz to 10Hz, 0.55μVp-p
Price: 0.03-0.08 USD
MDR774M-T, Integrated Circuits, SOSHIN electric co.,ltd
Price: 1-1.7 USD
Consumer Memory, BGA, 4K/32m Refresh, 2.5V±5% Power
Price: 1-100 USD
16/32-bit central processing unit, PLCC, CMOS technology, 32-bit internal structure, enhaned bus e...
Price: 0.62-1.6 USD
8-bit, successive approximation A/D converter, DIP, 800mW, –0.3V to VCC +0.3V
Price: 0.03-0.05 USD
1MZ1AT108, ROHM, IC
Price: 0.3-0.33 USD
SC70-5, General-Purpose, Low-Voltage, Single Tiny-Pack Comparator, 1.8V to 5.5V
Price: 29-32.5 USD
V300B3V3H150A, Module, Vicor Corporation
