IRFZ48ZS

MOSFET N-CH 55V 61A D2PAK

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SeekIC No. : 003433549 Detail

IRFZ48ZS: MOSFET N-CH 55V 61A D2PAK

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Part Number:
IRFZ48ZS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 61A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 64nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1720pF @ 25V
Power - Max: 91W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 64nC @ 10V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 61A
Input Capacitance (Ciss) @ Vds: 1720pF @ 25V
Power - Max: 91W
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V


Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon Limited) 61 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V(See Fig. 9) 43
IDM Pulsed Drain Current 240
PD @TC = 25°C Maximum Power Dissipation 91 W
  Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 73 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 120
IAR Avalance Current See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy mJ
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ48ZS features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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