MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 43 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @TC = 25°C | Maximum Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 73 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 120 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFZ48ZS
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