IGBT Transistors 330V Plasma Display Panel Trench
IRG6S330UPBF: IGBT Transistors 330V Plasma Display Panel Trench
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 330 V | ||
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 30 V | ||
Continuous Collector Current at 25 C : | 70 A | Power Dissipation : | 160 W | ||
Package / Case : | D2PAK | Packaging : | Tube |