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IRGB20B60PD1

Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode•Tighter Distribution of Parameters•Higher ReliabilityApplication•Telecom and S...

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SeekIC No. : 004377750 Detail

IRGB20B60PD1: Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Di...

IRGB20B60PD1 Data Sheet

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Part Number:
IRGB20B60PD1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability




Application

•Telecom and Server SMPS
•PFC and ZVS SMPS Circuits
•Uninterruptable Power Supplies
•Consumer Electronics Power Supplies




Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IF@ TC= 25° CContinuous Collector Current 40 A
IF@ TC= 100° CContinuous Collector Current 22 A
ICM Pulsed Collector Current 80 A
ICM Clamped Inductive Load Current 80 A
IF@ TC= 25° CDiode Continuous Forward Current 10 A
IF@ TC= 100° CDiode Continuous Forward Current 4 A
LSM Diode Maximum Forward Current 16 A
VGE Gate-to-Emitter Voltage ± 20 V
PD@ TC= 25° CMaximum Power Dissipation 156 W
PD@ TC= 100° CMaximum Power Dissipation 215 W
TJ
TSTG

Operating Junction and

Storage Temperature Range

 -55 to +150 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)





Description

•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz

IRGB20B60PD1


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