IRGB20B60PD1PBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Continuous Collector Current at 25 C : 40 A
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 2.35 V
Power Dissipation : 215 W


Features:

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability


Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600
IC @ TC = 25	Continuous Collector Current	40	A
IC @ TC = 100	Continuous Collector Current	22
ICM	Pulse Collector Current (Ref. Fig. C.T.4)	80
ILM	Clamped Inductive Load Current 􀀀􀀀	80
IF @ TC = 25	Diode Continous Forward Current	10
IF @ TC = 100	Diode Continous Forward Current	4
IFRM	Maximum Repetitive Forward Current	16
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25	Maximum Power Dissipation	215	W
PD @ TC = 100	Maximum Power Dissipation	86
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Parameters:

Technical/Catalog Information	IRGB20B60PD1PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	215W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB20B60PD1PBF IRGB20B60PD1PBF